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Non-linear annealing effect on Raman scattering of porous silicon layers

Dimitrov D. B., Savatinova I., Liarokapis E.

Opto-Electronics Review

1998

Vol. 6, No. 4

295-298

We have analyzed the Raman scattering spectra of as-prepared and high temperature vacuum annealed porous silicon (PS) layers. The Raman spectra were used to analyze changes in the porous silicon crystallinity following the annealing. The spectra indicate that the effect of annealing depends non-linearly on the temperature. The maximal amount of PS phase and a-Si (amorphous silicon) phase is observed for annealing temperature at 1000°C. The annealing at temperatures higher than 1000°C leads to the recristallization of a-Si phase.