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Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride

Izhnin Ihor, Fitsych Olena I., Świątek Z., Morgiel Y., Bonchyk Oleksandr Yu, Savytskyy Hrygoriy V., Mynbaev Karim, Voitsekhovskii Alexander V., Korotaev Alexander G., Yakushev Maksim Vitalievich, Marin Denis V., Varavin Vasilii S., Dvoretsky Sergey Alekseevich

Opto-Electronics Review

2019

Vol. 27, No. 1

14--17

Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and optical reflection. Strong influence of the graded-gap surface layer grown on top of the film on the behaviour of implantation-induced defects under arsenic activation annealing was revealed and interpreted.