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Optical and energy properties of CdSe1-xSx thin films obtained by the method of high-frequency magnetron sputtering

Kashuba Andrii, Andriyevsky Bohdan, Ilchuk Hryhorii, Semkiv Ihor, Andriyevska Ludmila, Moroz Iryna

Opto-Electronics Review

2025

Vol. 33, No. 2

art. no. e153808

CdSe₁-ₓSₓ (x = 0, 0.3, 0.4, 0.6, and 1) thin films were deposited on a quartz and silicon substrate using high-frequency magnetron sputtering. X-ray diffraction analysis estimated that the CdSe₁-ₓSₓ thin films are crystallized in a hexagonal structure [structure type - ZnO, space group P6₃mc (No. 186)]. Spectral dependence of the optical transmittance between 300 and 1500 nm of the obtained thin films at room temperature was measured. Normalized integral optical transmittance, optical band gap, spin-orbit splitting, and the value of the bowing parameter of the CdSe₁-ₓSₓ thin films are determined. The values of the optical band gaps for CdSe₁-ₓSₓ thin films were estimated using the two methods (by Tauc plot and dT/dλ). Concentration dependences of the energy gaps connected with the leading optical transitions in CdSe₁-ₓSₓ (Г₈ᵥ-Г₆c, Г₇ᵥ-Г₆c) and spin-orbit splitting are studied. It is shown that the concentration dependences of main optical transitions are quadratic. The principal explanation for this seems to be the Burstein-Moss effect, which is caused by the doping atoms' excess carriers (electrons and holes).