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Luminescence of II–VI and III–V nanostructures

Mynbaev K. D., Shilyaev A. V., Semakova A. A., Bykhanova E. V., Bazhenov N. L.

Opto-Electronics Review

2017

Vol. 25, No. 3

209--214

Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence of InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence of compositional fluctuations, which localized charge carriers, was established. A model, which described the effect of the fluctuations on the rate of the radiative recombination, the shape of luminescence spectra and the position of their peaks, was shown to describe experimental photoluminescence data quite reasonably. For InAs(Sb,P) LED nanoheterostructures, at low temperatures (4.2–100 K) stimulated emission was observed. This effect disappeared with the temperature increasing due to the resonant ‘switch-on’ of the Auger process involving transition of a hole to the spin-orbit-splitted band. Influence of other Auger processes on the emissive properties of the nanoheterostructures was also observed. Prospects of employing II–VI and III–V nanostructures in light-emitting devices operating in the mid-infrared part of the spectrum are discussed.

Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

Izhnin I. I., Izhnin A. I., Mynbaev K. D., Bazhenov N. L., Shilyaev A. V., Mikhailov N. N., Varavin V. S., Dvoretsky S. A., Fitsych O. I., Voitsekhovsky A. V.

Opto-Electronics Review

2013

Vol. 21, No. 4

390-394

Photoluminescence (PL) of HgCdTe-based hetero-epitaxial nanostructures with 50 to 1100 nm-wide potential wells was studied. The nanostructures were grown by molecular beam epitaxy on GaAs substrates. A strong degree of alloy disorder was found in the material, which led to the broadening of the PL spectra and a considerable Stokes shift that could be traced up to temperature T~230 K. Annealing of the structures improved the ordering and led to the increase in the PL intensity. A remarkable feature of the PL was an unexpectedly small decrease of its intensity with temperature increasing from 84 to 300 K. This effect can be related to localization of carriers at potential fluctuations and to the specific character of Auger-type processes in HgCdTe-based nanostructures.