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AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

Dyakonova N., But D. B., Coquillat D., Knap W., Drexler C., Olbrich P., Karch J., Schafberger M., Ganichev S. D., Ducournau G., Gaquiere C., Poisson M. A., Delage S., Cywinski G., Skierbiszewski C.

Opto-Electronics Review

2015

Vol. 23, No. 3

195-199

We report on the photoresponse dependence on the terahertz radiation intensity in AlGaN/GaN HEMTs. We show that the AlGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm². The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.

Field effect transistors for terahertz detection : silicon versus III-V material issue

Knap W., Videlier H., Nadar S., Coquillat D., Dyakonova N., Teppe F., Bialek M., Grynberg M., Karpierz K., Lusakowski J., Nogajewski K., Seliuta D., Kašalynas I., Valušis G.

Opto-Electronics Review

2010

Vol. 18, No. 3

225-230

Resonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III-V GaAs and GaN HEMTs and silicon MOSFETs.