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Transmission electron microscopy of In(Ga)As quantum dot structure

Kątcki J., Ratajczak J., Łaszcz A., Phillipp F., Paranthoen C., Cheng X. L., Fiore A., Passaseo A., Cingolani R.

Electron Technology : Internet Journal

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2003

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Vol. 35, nr 4

1-6

EN

The application of transmission electron microscopy (TEM) to the investigation of In(Ga)As quantum dot (QD) structures grown on GaAs substrates is reviewed. Using various examples of the QD structures the advantages of using TEM for the analysis of QDs are presented. From plan-view TEM images the areal density of dots can be determined in real structures where QDs are embedded in the structure. Cross-sectional TEM images inform us about the real geometry of the structure, the shape, width and height as well as the distribution of QDs. It is especially useful for the investigations of multilayer QD structures.

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TEM study of the formation of defects in AlGaAs/GaAs and InGaAs/GaAs heterostructures

Kątcki J., Ratajczak J., Phillipp F., Jin-Phillipp N. Y., Shiojiri M., Regiński K., Bugajski M.

Electron Technology

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1999

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Vol. 32, No. 4

343-347

EN

In this paper the formation of lattice defects in AlGaAs/GaAs and InGaAs/GaAs heterostructures is discussed. The heterostructures were grown by various techniques of epitaxy. Transmission electron microscopy (TEM) observations of the heterostructure showed that in AlGaAs/GaAs heterostructures the main reason for the formation of defects are local inhomogeneties but in InGaAs/GaAs heterostructures lattice misfit is responible for this process.

3

Structural study of InGaAs/GaAs heterostructures.

Kątcki J., Rzodkiewicz W., Ratajczak J., Adamczewska J., Regiński K., Phillipp F., Jin-Phillipp N.Y.

Inżynieria Materiałowa

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1998

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R. XIX, nr 4

844-847

EN

This paper reports results of the investigation of the influence of the profile of indium content in a InxGa1-xAs layer on the formation of dislocations. In GaAs/GaAs heterostructures were grown by molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) and x-ray diffractometry was involved. A difference in dislocation structure was observed in a heterostructure with a graded-index layer and with InxGa1-xAs multilayers.

4

Investigation of III-V semiconductor heterostructures.

Kątcki J., Ratajczak J., Adamczewska J., Lewandowski W., Rzodkiewicz W., Shiojiri M., Phillipp F.

Inżynieria Materiałowa

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1998

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R. XIX, nr 4

791-796

EN

In this paper an overview of analytical techniques necessary for characterization of the growth processes of III-V semiconductor heterostructures is given. The application of electron microscopic techniques as well as x-ray diffraction and photoluminescence is emphasized. The heterostructures discussed were grown by various techniques of epitaxy.

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Transmission electron microscopy, X-ray diffraction and photoluminescence diagnostics of heterostructures with InGaAs and GaAs layers

Kątcki J., Adamczewska J., Lewandowski W., Rzodkiewicz W., Ratajczak J., Phillipp F., Jin-Phillipp N. Y., Regiński K.

Electron Technology

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1998

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Vol. 31, No. 2

197-201

EN

The prupose of this paper is to show the applicaton of combined techniques (TEM, XRD, PL) for characterising the influence of the layer thicknees and indium content in InxGa₁₋xAs alloy on structural perfection of the InxGa₁₋xAs/GaAs heterostructure. As examples heterostructures with: a) In₀.₂Ga₀.₈As layers embedded in a GaAs matrix; b) InxGa₁₋xAs multilayers consisting of layers of different indium content and c) an index-graded InxGa₁₋xAs layer (x=0.01 ÷ 0.53) grown on a GaAs substrate were chosen. Determination of exact thicknees of each layer, alloy composition, and perfection of interfaces are crucial questions in developing technologies based on these heterostructures.