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2 Optica Applicata

2 2006

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Photoluminescence spectroscopy for the evaluation of band potential roughness of InGaN active layers

Kazlauskas K., Jursenas S., Miasojedovas S., Pobedinskas P., Tamulaitis G., Zukauskas A., Ivanov V.Y., Godlewski M.

Optica Applicata

2006

Vol. 36, nr 2-3

181-185

Photoluminescence spectroscopy in combination with Monte Carlo simulation of exciton hopping is demonstrated to be a valuable tool for quantitative analysis of the band potential profile in active layers for InGaN-based light emitters. Recently proposed double-scaled potential profile model is used to reveal the scale of potential fluctuations in the individual In-rich regions as well as the dispersion of the average exciton localization energy in these regions. The influence of the different potential fluctuation scales on the stimulated emission threshold and luminescence decay time of highly excited InGaN active layers is studied.

Characterization of InGaN structures grown by epitaxial lateral overgrowth over a-plane GaN template

Miasojedovas S., Jursenas S., Kuokstis E., Zukauskas A., Gaevski M.E., Lee J., Shatalov M., Gong Z., Adivarahan V., Sattu A., Mokina I., Yang J., Asif Khan M.

Optica Applicata

2006

Vol. 36, nr 2-3

351-358

We report on the luminescence characterization of InGaN/GaN multiple quantum well (MQW) structures with average 15% In content in the well layers, grown on polar and non-polar sapphire substrates utilizing epitaxial lateral overgrowth (ELOG) technique. Significant modification of the emission properties of MQWs grown over non-polar ELOG structure in comparison with non-polar orientation was observed. It was attributed to the formation of In-rich quantum dot like structures in the vicinity of substrate related defects along stripes formed during ELOG procedure. The absence of the stimulated emission and the significant reduction of carrier lifetime, observed under strong excitation, indicate the high density of nonradiative centers in the In-rich quantum dot regions of non-polar ELOG MQWs.