Impedance spectroscopy measurements in various gas atmospheres were carried out in order to explain the doubts about the type of carriers and the mechanism of electrical conductivity in Bi-Si-O and Pb-Si-O glasses. In bismuth silicate glass, a typical ionic conductivity with oxygen ions as charge carriers was observed. The level of electrical conductivity of the glass at 400 °C was 5 × 10-8 S·cm-1, with the activation energy of 1.3 eV and was independent of measuring atmosphere. In the case of lead silicate glasses, the conductivity changed with measuring atmosphere. Two types of charge carriers: oxygen ions and proton ions were postulated. Proton conductivity measured in wet argon at temperature 400 °C was estimated at the level of 4 × 10-8 S·cm-1 while the oxygen ions conductivity in such conditions was 78 × 10-8 S·cm-1. We suggest that both types of charge carriers are transported along the same conduction paths using oxygen defects in the glass structure.
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In order to find a relationship between structural and electrical properties, niobium and yttrium doped SrTiO3 ceramics were prepared via solid-state reaction. The samples were sintered in hydrogen and air conditions. The samples were also fabricated with a pore-former to obtain highly porous specimens. The electrical properties of Nb-doped SrTiO3 samples and yttrium and niobium co-doped SrTiO3 were compared. The comparable electrical properties were observed and discussed according to previous literature reports. It was noticed that the synthesis in a reducing hydrogen atmosphere can increase the solubility of dopants. Moreover, the samples sintered in air presented lower conductivity level and worse structural properties than the samples sintered in hydrogen. The explanation of obtained results was also suggested and discussed.
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