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Asymmetric multiple quantum well heterostructure laser systems : conception, performance, and characteristics

Kononenko V. K., Afonenko A. A., Manak I. S., Nalivko S. V.

Opto-Electronics Review

2000

Vol. 8, No. 3

241-250

A new type of laser diodes and amplifiers based on asymmetric quantum-well heterostructures having active layers of different thickness and / or compositions has been considered. Bistable switching and regimes of regular radiation pulsation at two or three remote wavelengths in the range 790 - 850 nm in the GaAs-AlGaAs bi- and triple - quantum-well heterostructures are described. Influence of non-linear processes including gain suppression due to carrier heating on lasing regimes has been examined. Transformation of gain bands for TE and TM modes in dependence on the pump current has been studied for asymmetric four-quantum-well structures. The interval of tuning amplification wavelengths in the system reaches up to 70 nm.