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Structure of interfaces in heteroepitaxial diamond films.

Jager W., Wittorf D., Urban K.

Inżynieria Materiałowa

1998

R. XIX, nr 4

785-790

High-resolution transmission electron microscopy (HRTEM) studies of diamond films grown on Si (100) substrates by microwave-assisted chemical vapour deposition show that, under optimized conditions, epitaxially oriented diamond grains may form directly on Si or on thin interlayers of nanocrystalline Beta-SiC. The orientation relationships between the crystal lattices can be described by a near-coincidence site lattice model if small elastic lattice distortions are taken into account. Characteristic of the structure of large-angle grain boundaries are facets parallel to the {111} planes of the diamond lattice. Lattice images of the {110}-diamond lattice planes in <001>-zone axes orientations depict that the structure of small-angle grain boundaries can be described by a dislocation model. Large open volumes and additional second carbon phases are not found at the grain boundaries in diamond films beyond 10 micrometers. Such microscopic investigations of the structure of interfaces in diamond films on silicon are essential for a fundamental understanding of the deposition process and of the correlation of structural with physical interface properties, such as e.g. thermal transport.