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Holographic imaging with a nanometer resolution using compact table-top EUV laser

Wachulak P. W., Marconi M. C., Bartels R. A., Menoni C. S., Rocca J. J.

Opto-Electronics Review

2010

Vol. 18, No. 1

80-90

Holographic 2D/3D imaging with nanometer resolution using short wavelength extreme ultraviolet (EUV) light is presented in this paper. Gabor's holograms were recorded with a highly coherent table top EUV laser with different numerical apertures demonstrating ultimately a spatial resolution of 46+/-2 nm, comparable with the illumination wavelength, in 2D holographic imaging. Three dimensional images were obtained from a single high numerical aperture hologram recorded in a high resolution photoresist and numerically reconstructed at different image planes, allowing numerical optical sectioning with a lateral resolution ∼170 nm and depth resolution of 2.4 μm. The holograms were recorded in a high resolution photoresist and digitized with an atomic force microscope. To assess the spatial resolution of the numerical reconstructions of the holograms a correlation method was used. The algorithm allows for simultaneous estimation of the resolution and the feature size of the image under analysis.

Nanopatterning in a compact setup using table top extreme ultraviolet lasers

Wachulak P. W., Capeluto M. G., Menoni C. S., Rocca J. J., Marconi M. C.

Opto-Electronics Review

2008

Vol. 16, No. 4

444-450

The recent development of table top extreme ultraviolet (EUV) lasers have enabled new applications that so far were restricted to the use of large facilities. These compact sources bring now to the laboratory environment the capabilities that will allow a broader application of techniques related to nanotechnology and nanofabrication. In this paper we review the advances in the utilization of EUV lasers in nanopatterning. In particular we show results of the nanopatterning using a table-top capillary discharge laser producing 0.12-mJ laser pulses with 1.2-ns time duration at a wavelength λ = 46.9 nm. The nanopatterning was realized by interferometric lithography using a Lloyd's mirror interferometer. Two standard photoresists were used in this work, polymethyl methacrylate (PMMA) and hydrogen silsesquioxane (HSQ). Pillars with a full width half maximum (FWHM) diameter of 60 nm and holes with FWHM diameter of 130 nm were obtained over areas in excess of 500x500 µm².