Thermal stresses in microelectronics are produced by the mismatch between the thermo-mechanical properties of different components in devices. This paper presents a numerical model which allows to predict and optimize a thermo-mechanical behavior of power semiconductor devices at the earlier phase of the product development processes. It is very important to provide reliability, to reduce a number of expensive physical experiments and to obtain optimal design. As the demonstrator, an soldered power semiconductor diode has been considered to show the robustness and capability of the proposed approach for transient temperature and thermal stresses characterization.
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