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Recent developments in vertical MOSFETs and SiGe HBTs

Hall S., Buiu O., Ashburn P., de Groot K.

Journal of Telecommunications and Information Technology

2004

nr 1

26-35

There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBT's in silicon-on-insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBT's with SOI-CMOS.