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Computer Simulation of Processes Connected with Electron Donor Fluorescence Quenching in Rigid Matrices. Effect of an External Electric Field

Gutman M., Hilczer M.

Polish Journal of Chemistry

2008

Vol. 82, nr 12

2245-2253

Computer simulation of photoexcited electron-donor D* fluorescence quenching in a rigid matrix has been performed. Three processes are assumed to occur: (1) the natural decay of D* excitation, (2) the electron transfer from D* to acceptor A, (3) migration of the excitation energy among D molecules. The effect of an external electric field F on process (2) has been included into considerations. Fluorescence decay curves calculated for various concentrations of D and the field-induced variation in the donor fluorescence intensity have been compared with respective experimental data and the results obtained from the approximate analytical calculations (hop ping model).

Effect of excitation migration on the decay of excited states via electron transfer to acceptors

Gutman M., Hilczer M., Tachiya M.

Nukleonika

2005

Vol. 50,suppl.2

39-43

Simulation of fluorescence quenching due to electron transfer from a photoexcited donor to an acceptor, in a rigid matrix has been performed. The model assumes competition between processes of the electron transfer and the resonant excitation energy transfer among donors. Electron and energy transfers are described in terms of the Marcus and the Förster theories, respectively. Dependence of the fluorescence quenching on the donor concentration and on the parameters of the Marcus and Förster equations has been investigated at a fixed acceptor concentration. Fluorescence decay curves calculated for various concentrations of donors have been compared with experimental decays.