Wyniki wyszukiwania - BazTech

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Mikroskop STM/AFM do zastosowań badawczych w zaawansowanych technologiach w przemyśle oraz w dydaktyce szkół wyższych

Majcher A., Mrozek M., Zbrowski A., Olejniczak W., Pawłowski S., Piskorski M.

Problemy Eksploatacji

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2011

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nr 3

177-188

PL

W artykule przedstawiono zagadnienia konstrukcyjne związane z budową i oprogramowaniem tunelowego mikroskopu skaningowego oraz mikroskopu sił atomowych. Opracowane urządzenie łączy obydwie funkcje, a dostosowanie do spełniania jednej z nich odbywa się przez wymianę jednej z części głowicy pomiarowej oraz uruchomienia odpowiedniego fragmentu oprogramowania. Z uwagi na przeznaczenie mikroskopu do badań przemysłowych oraz do nauczania podstaw nanotechnologii w szkołach wyższych zostały zastosowane rozwiązania ułatwiające obsługę, a zwłaszcza proces wstępnej regulacji aparatury. Dzięki zastosowaniu modularnej konstrukcji aparatury oraz oprogramowania możliwe jest przystosowanie urządzenia do dalszej rozbudowy rozszerzającej zakres aplikacji.

EN

Construction matters connected with software of scanning tunneling microscope and atomic force microscope have been presented in the article. Those presented devices connect both functions and adaptation of one of the functions which is held by an exchange of one of the parts of the measure heads and by setting an appropriate part of the software in motion. Taking into consideration the fact that the microscope is going to be used in industrial tests as well as to teach basis of nanotechnology at universities, some solutions that made the operation easier have been used - especially the process of initial regulation of the device. Thanks to the implementation of modular construction of the device and the software it is possible to accommodate the device to extend the range of applications.

2

Design and fabrication of GaSb/InGaAsSb/AlGaSb mid-infrared photodetectors

Piotrowski T. T., Piotrowska A., Kamińska E., Piskorski M., Papis E., Gołaszewska K., Kątcki J., Ratajczak J., Adamczewska J., Wawro A., Piotrowski J., Orman Z., Pawluczyk J., Nowak Z.

Opto-Electronics Review

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2001

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Vol. 9, No. 2

188-194

EN

The paper reports on the design and fabrication of LPE-grown GaSb/n-InxGa₁-xAsySb₁-y/p-AlxGa₁-xAsySb₁-y heterojuction photodetectors operating in the 2-2.4 mm wavelength region. Experiments on LPE growth of high-x-content quaternaries as well as optimisation of device processing has been carried out. LPE growth at T » 530°C enabled obtaining lattice matched heterostructures with 19% indium in the active layer In₀.₁₉Ga₀.₈₁As₀.₁₆Sb₀.₈₄/Al₀.₂₄Ga₀.₇₆As₀.₀₄Sb₀.₉₆ and photodetectors with lc = 2.25 um. By increasing the temperature of epitaxial growth to 590°C In₀.₂₃Ga₀.₇₇As₀.₁₈Sb₀.₈₂/Al₀.₃₀Ga₀.₇₀As₀.₀₃Sb₀.₉₇ heterostructures (with 23% indium content) suitable for photodetectors with lc = 2.35 um have been obtained. Mesa-type photodiodes were fabricated by RIE in CCl₄/H₂ plasma and passivated electrochemically in (NH₄)₂S. These devices are characterised by differential resistance area product up to 400 Wcm² and the detectivity in the range the range 3´1010-2´1011 cmHz¹/²/W, in dependence on the photodiode active area and cut-off wavelength.

3

Wzrost epitaksjalny i właściwości warstw poczwórnych na bazie GaSb

Piskorski M., Papis E., Gołaszewska K., Piotrowski T. T., Piotrowska A., Barcz A., Zieliński M., Adamczewska J., Sawicki M.

Elektronika : konstrukcje, technologie, zastosowania

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2001

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Vol. 42, nr 8-9

29-31

EN

Quaternary compounds grown on GaSb substrates are very attractive materials for IR applications. Ga1-xJnxASySb1-y are used as active layers in emitters and detectors, for mid infrared region, whereas Ga1-xAlxASySb1-y compounds are usefull materials for low refractive index cladding layers in DH lasers and for wide gap window layer in photodetectors operating at wavelengths up to 2,4 um. Among various techniques of growing epitaxial layers of III—V semiconductors, liquid phase epitaxy (LPE) still remains interesting method due to its simplicity and satisfactory results.

4

Technology and properties of GaInAsSb layers grown on GaSb substrates

Piskorski M., Papis E., Gołaszewska K., Jung W., Adamczewska J., Perchuć L.

Electron Technology

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2000

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Vol. 33, No. 3

393-399

EN

The Ga1-xInxAsySb1-y layers were grown on GaSb substrates by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, X--ray high resolution diffractometry, electroprobe microanalysis (EPXMA) and numerical analysis of measured C-V characteristic of Schottky barrier junction Hg--GaInAsSb. The different compositions of Ga1-xInxAsySb1-y compounds lattice matched to GaSb substrates with x value changing from 0.021 to 0.23, were established. Applying of sulfidation technique to the substrate's surface before growth, improved layer's quality n-type layers, with carrier concentration below 3⋅10⁻¹⁵ cm⁻³ have been grown.