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Interpretation of the piezoelectric photothermal spectra of p-type silicon samples

Maliński M., Memon M., Ikari T.

Archives of Acoustics

2003

Vol. 28, no. 2

139-148

This paper presents both experimental and theoretical amplitude and phase piezoelectric photothermal spectra (PPTS) of p-type silicon samples. two dominant peaks at 1.07 eV and 1.18 eV were observed in PPT spectra at room temperature. The relative intensities of these peaks change by a surface treatment. Numerical analysis is performed by supposing that an inactive layer exists at the sample surface. The characteristic structure observed in the piezoelectric amplitude spectra of p-Si samples is well explained by the model proposed for multilayer structure. We found that the proposed inactive layer model is quite helpful in investigating the surface properties of a semiconductor material.