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Cost-effective titania layers over 100 nm thick : effect of annealing on the structural, morphological, and optical properties

Zięba Magdalena, Tyszkiewicz Cuma, Gondek Ewa, Wojtasik Katarzyna, Nizioł Jacek, Dorosz Dominik, Starzyk Bartłomiej, Szymczak Patryk, Pakieła Wojciech, Rogoziński Roman, Karasiński Paweł

Opto-Electronics Review

2023

Vol. 31, No. 4

art. no. e147913

Titania dioxide (TiO₂) layers were synthesized via the acid-catalysed sol-gel route using titania (IV) ethoxide, and then annealed at temperatures varying in the range of 150-700 °C. The research concerned the effect of annealing temperature on the structure of TiO₂ layers, their surface morphology, and their optical properties. Further, X-ray diffractometry, and Raman spectroscopy were used to determine the structure of TiO₂ layers. Scanning electron and atomic force microscopy were used to study the surface morphology of TiO₂ layers. Transmittance, reflectance, absorption edge, and optical homogeneity were investigated by UV-VIS spectrophotometry, while the refractive index and thicknesses of TiO₂ layers were measured using a monochromatic ellipsometer. Chromatic dispersion characteristics of the complex refractive index were determined using spectroscopic ellipsometry. Structural studies have shown that the TiO₂ layers annealed at temperatures up to 300 °C are amorphous, while those annealed at temperatures exceeding 300 °C are polycrystalline containing only anatase nanocrystals with sizes increasing from 6 to 20 nm with the increase of the annealing temperature. Investigations on the surface morphology of TiO₂ layers have shown that the surface roughness increases with the increase in annealing temperature. Spectrophotometric investigations have shown that TiO₂ layers are homogeneous and the width of the indirect optical band gap varies with annealing temperature from 3.53 eV to 3.73 eV.

Organiczne diody elektroluminescencyjne na bazie pochodnych pirazolochinoksalin

Pokladko-Kowar Monika, Wojtasik Katarzyna

Przegląd Elektrotechniczny

2022

R. 98, nr 9

220--223

Pochodne pirazolochinoksalin (A-PQX) badano pod kątem zastosowań w organicznych diodach elektroluminescencyjnych (OLED). Wykonane zostały pomiary widm absorpcyjnych, fotoluminescencyjnych oraz elektroluminescencyjnych. Zbudowane zostały jednowarstwowe komórki o strukturze ITO/PEDOT:PSS/PVK+A-PQX/Ca/Al. Wyznaczone zostały parametry charakterystyczne dla OLED. Maksymalna luminescencja otrzymana dla tych struktur wynosiła 884 cd/m2 dla diody na bazie 7-N,N-dietylo-1-fenylo-3-metylo-1H-pirazolo[3,4-b]chinoksaliny (7- PQX).

Pyrazoloquinoxaline derivatives (A-PQX) have been studied for applications in organic light emitting diodes (OLEDs). Single-layer OLEDs with the structure: ITO/PEDOT:PSS/PVK+A-PQX/Ca/Al were built. Parameters characteristic for OLED were determined. The absorption, photoluminescent and electroluminescent spectra were measured. The maximum luminescence obtained for these structures was 884 cd/m2 for a diode based on 7-N,N-diethyl-3-methyl-1-phenyl-1H-pyrazolo[3,4-b]quinoxaline (7A-PQX).