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1 2009

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Formation and Characterization of Mixed Copper Sulfide – Copper Telluride Layers on the Polyamide 6 Surface

Janickis V., Žalenkiene S.

Polish Journal of Chemistry

2009

Vol. 83, nr 11

1915-1927

IR and UV absorption spectra show that telluropentathionate an ions are sorbed into the polyamide 6 films if they are treated with 0.025–0.1 mol/dm3 solutions of potassium telluropentathionate, K2TeS4O6, in 0.2 mol/dm3 HCl at 1-20 garduate C. The concentration of sorbed telluropentathionate ions increases with the increase of the duration of treatment, concentration and temperature of TeS4O6 2- solution. The mixed copper sulfide–copper telluride, CuxS–CuyTe, layers are formed on the surface of polyamide 6 after the treatment of chalcogenized poly mer with Cu(II/I) salt so lu tion (10 min, 78 graduate C): the anions TeS4O6 2 - containing tellurium and sulfur atoms of low oxidation state react with the copper(II/I) ions. The conditions of a polymer initial chalcogenation determine the concentration of copper and the composition of chalcogenide layer. The concentration of copper in the chalcogenide layer increases with the increase of initial chalcogenation duration, temperature and the concentration of solution. The results of XRD confirmed the formation of mixed copper sulfide–copper telluride layers on the surface of polyamide 6: four copper sulfide phases, chalcocite, Cu2S, djurleite, Cu1.9375S, anilite, Cu1.75S, copper sulfide CuS2; four copper telluride phases Cu4Te3, Cu1.85Te, vulcanite, CuTe, Cu1.80Te and elemental sulfur. The phase composition of layers changes depending on the conditions of the polymer initial treatment in a K2TeS4O6 solution. At room temperature, electrical sheet resistance of the layers vary from 1.5 k Omega/empty set to 1.1ź103 k Omega/empty set . The regularities deter - mined en able formation of the layers of copper sulfide–copper telluride on the surface of a polyamide 6 of desirable composition and conductivity by the sorption method using the solu tions of potassium telluropentathionate as a precursor.