Ograniczanie wyników
Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników

Znaleziono wyników: 1

Liczba wyników na stronie
first rewind previous Strona / 1 next fast forward last
Wyniki wyszukiwania
help Sortuj według:

help Ogranicz wyniki do:
first rewind previous Strona / 1 next fast forward last
EN
The proposed study is improvised value-engineered modifications for the basic interleaved boost converter (IBC) by including relevant modifications in circuits, which is expected for a better performance in switching with reduction in losses. The newly modified IBC circuit with insulated gate bipolar transistor (IGBT) along with converter has been experimented by simulations and the results are tabulated to modified IBC with metal oxide silicon field effect transistors. Further experimental analysis and validations of the proposed simulation with hardware developed adopting model SKM195GB066D consisting of IGBTs is presented. This study further enhances and summarises the optimum utilisation and the performance of IBC with the proposed IGBT modules that synchronises power diode. Enhancing the simulation outcomes, the hardware is proposed and developed to be tested for a load up to 1.5 kW with the evaluation of key parameters such as efficiency of the converter.
first rewind previous Strona / 1 next fast forward last
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.