The purpose of this scientific work is the research of energy-band diagrams and capacity-voltage characteristics of CdxHg₁₋xTe -based variband heteroepitaxial structures with taking into account the dependence of electron affinity on the composition. Numerical simulations of energy-band diagrams and capacity-voltage characteristics for metal-insulator-semiconductor structures based on CdxHg₁₋xTe -variable composition layers are carried out in this work. Energy diagrams are calculated with taking into account the dependence of electron affinity on the composition x of CdxHg₁₋xTe. This dependence was obtained in terms of dependence of the local electroneutrality level on the composition for CdxHg₁₋xTe.
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