Wyniki wyszukiwania - BazTech

Ograniczanie wyników

1 Opto-Electronics Review

1 2018

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

Numerical analysis of SiGeSn/GeSn interband quantum well infrared photodetector

Pareek P., Das M. K., Kumar S.

Opto-Electronics Review

2018

Vol. 26, No. 2

149--157

In this paper, detailed theoretical investigation on the frequency response and responsivity of a strain bal-anced SiGeSn/GeSn quantum well infrared photodetector (QWIP) is made. Rate equation and continuity equation in the well are solved simultaneously to obtain photo generated current. Quantum mechanical carrier transport like carrier capture in QW, escape of carrier from the well due to thermionic emission and tunneling are considered in this calculation. Impact of Sn composition in the GeSn well on the frequency response, bandwidth and responsivity are studied. Results show that Sn concentration in the GeSn active layer and applied bias have important role on the performance of the device. Significant bandwidth is obtained at low reverse bias voltage, e.g., 200 GHz is obtained at 0.28 V bias for a single Ge0.83 Sn0.17 layer. Whereas, the maximum responsivity is of 8.6 mA/W at 0.5 V bias for the same structure. However, this can be enhanced by using MQW structure.