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27 dBm Microwave Amplifiers with Adaptive Matching Networks

Rosolowski D., Wojtasiak W., Gryglewski D.

International Journal of Electronics and Telecommunications

2011

Vol. 57, No. 1

103-108

The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such as: frequency range, output power level, gain and etc.