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2 Optica Applicata

2 2020

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Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

Nowakowski-Szkudlarek Krzesimir, Muziol Grzegorz, Żak Mikolaj, Hajdel Mateusz, Siekacz Marcin, Feduniewicz-Żmuda Anna, Skierbiszewski Czesław

Optica Applicata

2020

Vol. 50, nr 2

323--330

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping levelas high as 2 × 1020 cm–3.

Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes

Hajdel Mateusz, Muzioł Grzegorz, Nowakowski-Szkudlarek Krzesimir, Siekacz Marcin, Wolny Paweł, Skierbiszewski Czesław

Optica Applicata

2020

Vol. 50, nr 2

311--321

The influence of using InGaN waveguides on blue laser diodes was theoretically studied using 1D drift diffusion model and 2D optical mode calculation. Despite of the known effect of increased confinement of an optical mode, especially for long wavelengths, an unexpected influence on the efficiency of carrier injection into the active region is discussed. It is found that InGaN-AlGaN interface is crucial to achieving high injection efficiency. A numerical model is created, which describes the influence of InGaN waveguide and Mg doping of electron blocking layer on basic properties of laser diodes. It is found that an increase of injection efficiency allows to reduce the doping level in an electron blocking layer and take advantage of decreased optical losses.