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1 Opto-Electronics Review

1 2001

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HgCdTe MBE grown LWIR linear arrays

Sizov F. F., Vasiliev V. V., Esaev D. G., Ovsyuk V. N., Sidorov Y. G., Reva V. P., Golenkov A. G., Zabudsky V. V., Gumenjuk-Sychevskaya J. V.

Opto-Electronics Review

2001

Vol. 9, No. 4

391-396

Mercury-cadmium-telluride (MCT) 2x64 linear arrays with silicon readouts were designed, manufactured and tested. MCT layers were grown by MBE method on (103) GaAs substrates with CdZnTe buffer layers. 50x50 [mi]m n-p-type photodiodes were formed by boron implantation. The parameters of long wavelenght infrared MCT linear arrays with cutoff wavelenght ʎco ≈ 10.0-12.2 [mi]m and Si readouts were tested separately before hybridisation. The HgCdTe arrays and Si readouts were hybridised by cold welding In bumps technology. Dark carrier transport mechanisms in these diodes were calculated and compared with experimental data. Two major curment mechanisms were included into the current balance equations: trap-assisted tunnelling and Shockley-Reed-Hall generation-recombination processes via a defect trap level in the gap. Other current mechanisms (band-to-band tunnelling, bulk diffusion) were taken into account as additive contributions. Tunnelling rate characteristics were calculated within k-p-aproximation with the constant barrier electric field. Good agreement with experimental data was obtained.