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Annealing time effects on the surface morphology of C–Pd films prepared on silicon covered with SiO2

Kozlowski M., Radomska J., Wronka H., Czerwosz E., Firek P., Sobczak K., Dluzewski P.

Optica Applicata

2013

Vol. 43, nr 1

81--89

Morphology changes of C–Pd films prepared in physical vapor deposition (PVD) process and next annealed in a temperature of 650 °C during different time were studied. These studies were performed with electron microscopy methods (scanning SEM and transmission TEM). It was found that not annealed films are flat and they are composed of grains with composite character and size of 100–200 nm. Pd nanocrystallite of a diameter of a few nanometers in some carbon matrix was placed in these grains. For annealed films, a formation of palladium nanograins with different sizes and shapes as well as a porous carbon matrix were observed. High resolution TEM investigation was used to determine a structure of all these grains. An increase in duration time of annealing process led to diminishing of the porosity of carbon matrix and a number of Pd grains situated on the film surface. It was also stated that covering of Si with SiO2 layer prevents formation of palladium silicide.