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TEM study of the formation of defects in AlGaAs/GaAs and InGaAs/GaAs heterostructures

Kątcki J., Ratajczak J., Phillipp F., Jin-Phillipp N. Y., Shiojiri M., Regiński K., Bugajski M.

Electron Technology

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1999

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Vol. 32, No. 4

343-347

EN

In this paper the formation of lattice defects in AlGaAs/GaAs and InGaAs/GaAs heterostructures is discussed. The heterostructures were grown by various techniques of epitaxy. Transmission electron microscopy (TEM) observations of the heterostructure showed that in AlGaAs/GaAs heterostructures the main reason for the formation of defects are local inhomogeneties but in InGaAs/GaAs heterostructures lattice misfit is responible for this process.

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Structural study of InGaAs/GaAs heterostructures.

Kątcki J., Rzodkiewicz W., Ratajczak J., Adamczewska J., Regiński K., Phillipp F., Jin-Phillipp N.Y.

Inżynieria Materiałowa

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1998

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R. XIX, nr 4

844-847

EN

This paper reports results of the investigation of the influence of the profile of indium content in a InxGa1-xAs layer on the formation of dislocations. In GaAs/GaAs heterostructures were grown by molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) and x-ray diffractometry was involved. A difference in dislocation structure was observed in a heterostructure with a graded-index layer and with InxGa1-xAs multilayers.

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Transmission electron microscopy, X-ray diffraction and photoluminescence diagnostics of heterostructures with InGaAs and GaAs layers

Kątcki J., Adamczewska J., Lewandowski W., Rzodkiewicz W., Ratajczak J., Phillipp F., Jin-Phillipp N. Y., Regiński K.

Electron Technology

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1998

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Vol. 31, No. 2

197-201

EN

The prupose of this paper is to show the applicaton of combined techniques (TEM, XRD, PL) for characterising the influence of the layer thicknees and indium content in InxGa₁₋xAs alloy on structural perfection of the InxGa₁₋xAs/GaAs heterostructure. As examples heterostructures with: a) In₀.₂Ga₀.₈As layers embedded in a GaAs matrix; b) InxGa₁₋xAs multilayers consisting of layers of different indium content and c) an index-graded InxGa₁₋xAs layer (x=0.01 ÷ 0.53) grown on a GaAs substrate were chosen. Determination of exact thicknees of each layer, alloy composition, and perfection of interfaces are crucial questions in developing technologies based on these heterostructures.