Present paper reports optical and electrical properties of samarium doped CdSe nanocrystalline thin film which was grown on a glass substrate by chemical bath deposition method (CBD). X-ray diffraction (XRD) analysis revealed that the deposited films were nanocrystalline with sphalerite cubic structure. The average crystallite size calculated from FWHM of XRD peaks was found to be 10.11 nm. The bandgap of the Sm doped CdSe nanocrystalline thin films was calculated to be 1.91 eV to 2.22 eV. The optical absorption edge of undoped (pure) and Sm doped CdSe films was obtained between 650 nm to 640 nm showing blue shift as compared to bulk CdSe. Sm doping further enhanced the photoconductivity of these films. The I-V characteristic confirmed the suitability of prepared films for photosensor applications.
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It is widely accepted that failure due to plastic deformation in metals greatly depends on the stress triaxiality factor (TF). This article investigates the variation of stress triaxiality along the yield locus of ductile materials. Von Mises yield criteria and triaxiality factor have been used to determine the critical limits of stress triaxiality for the materials under plane strain condition. A generalized mathematical model for triaxiality factor has been formulated and a constrained optimization has been carried out using genetic algorithm. Finite element analysis of a two dimensional square plate has been carried out to verify the results obtained by the mathematical model. It is found that the set of values of the first and the second principal stresses on the yield locus, which results in maximum stress triaxiality, can be used to determine the location at which crack initiation may occur. Thus, the results indicate that while designing a certain component, such combination of stresses which leads the stress triaxiality to its critical value, should be avoided.
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