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ZrxCu1-x amorphous films were prepared on Si(111) substrates by magnetron co-sputtering of pure Zr and Cu targets. It was found that the amorphous forming ability of the films increased with x when x was smaller than 65. It was therefore different from their bulk counterparts, which only for x = 35 and 50 were reported to have high glass forming ability during casting. The structures of the films were sensitive to the substrate temperature and the sputtering pressure of argon. X-ray diffraction and atomic force microscopic analyses of the Zr65Cu35 amorphous films annealed at various temperatures confirmed that the crystallization temperature was approximately 573 K.
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