Experimental and theoretical investigations of the optical and magneto-optical (MO) properties of sputter deposited Fe/SixFe1-x multilayers (MLS) are presented. The diagonal and off-diagonal components of the optical conductivity tensor of the MLS have been determined in the photon energy range 0.8-5.8 eV from the measurements of the magneto-optical complex Kerr angles and the optical data measured by the spectroscopic ellipsometry and compared with the theoretical ones calculated from first principles in density functional theory by the LMTO method within the supercell approach. The calculations have been performed for different models of iron silicide structures. In particular, various spacer layer structures: metallic FeSi and semiconducting FeSi2 iron-silicide phases, as well as pure Si and Fe were investigated. The comparison of the recorded and calculated spectra confirm the conclusion inferred from other studies that the spacer layer structures represent semiconducting A-FeSi and A-FeSi2 phases rather than the metallic FeSi phase.
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Resistivity, temperature coefficient of resistance and magnetization as functions of iron thickness have been studied in a series of magnetron sputtered Fe/Si multilayers with constant Si layer thickness. At the Fe/Si interfaces, a significant amount of deposited iron is transformed into nonmagnetic (0.5 nm) and ferromagnetic (up to 2 nm) nonuniform Fe-Si mixture with a gradient of Fe concentration. Finally, for iron thicknesses above 2.5 nm a bcc-Fe phase appears.
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The magnetic and structural properties of sputtered Fe/Ge, Fe/Ge/Si/Ge and Fe/Si/Ge/Si multilayers were studied. Magnetization measurements revealed the absence of antiferromagnetic coupling for Ge spacer. It was found that during the multilayer deposition a 0.5 nm thick Fe layer at each Fe/Ge interface became nonferromagnetic leading to formation of antiferromagnetic structures. Mössbauer spectra showed the existance of ferro- and/or antiferromagnetic structures at Fe/Ge interfaces, and ferromagnetic and paramagnetic structures at Fe/Si interfaces. We have found that substitution of Si by at least 0.5 nm of Ge in the 1.1 nm thick Si spacer led to disappearance of antiferromagnetic coupling in the Fe/Si multilayers.
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