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High pressure Raman study of layered semiconductor TlGaSe2

Jabarov S. H., Aliyeva V. B., Mammadov T. G., Mammadov A. I., Kichanov S. E., Dubrovinsky L. S., Babayev S. S., Pashayeva E. G., Dang N. T.

Materials Science Poland

2018

Vol. 36, No. 2

203--208

Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe2 were performed in a pressure range up to 10.24 GPa. The pressure-induced first-order phase transition accompanied by reconstruction of the layer structure was observed at the pressure P ~ 0.9 GPa. The mode-Grüneisen parameters of intralayer bonds were calculated for TlGaSe2. The contribution of thermal expansion to temperature changes of phonon frequencies was defined. The type of intralayer bonds and their pressure transformation were analyzed in layered TlGaSe2. It was shown that the nature of intramolecular forces in molecular crystals and intralayer forces in layered GaS, GaSe and TlGaSe2 is similar.