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EN
This paper presents an integrated evaluation approach for decision support enabling effective supplier selection and ordering processes in textile industry. The integrated evaluation method in this study includes two phases that consist of fuzzy AHP and goal programming approaches. Supplier evaluation and selection is a multi-criterion decision problem which includes both qualitative and quantitative factors. That’s why; firstly, linguistic variables expressed in trapezoidal fuzzy numbers are applied to assess weights and ratings of supplier selection criteria. Then a hierarchy multiple model based on fuzzy set theory is expressed and the geometric mean method of Buckley is used to aggregate pair wise comparisons. Finally, a goal programming model is built using the goals about coefficients of suppliers, total ordering cost, number of wrong deliveries, total delivery cost under the constraints of required minimum and maximum number of orderings and acceptable quality cost levels of each supplier and demand constraint of the product.
EN
The transport behavior of Hg2+ from donor aqueous solution into a receiving aqueous solution through bulk and supported liquid membranes containing a calix[4]arene derivative 1 as a car rier was in ves ti gated. The kinetic parameters of bulk liquid membrane were analyzed as suming two consecutive, irreversible first-order reactions. The influence of temperature, stirring rate, carrier concentration and solvent on the kinetic parameters (k1, k2, Rm max , tmax, Jd max , Ja max ) has also been investigated. The activation energy values are calculated as 13.4 and 1.41 kcal mol–1 for extraction and reextraction, respectively. The activation energy values indicate that the process is diffusionally controlled by species. In addition, the transport behavior of Hg2+ from aqueous solution through a flat-sheet supported liquid membrane has been investigated by the use of calix[4]arene derivative 1 as carrier and Celgard 2500 as the solid support. A Danesi mass transfer model was used to calculate the permeability coefficients for each parameter (type of solvent and anion).
EN
An analysis of the measured macroscopic withinwafer variations for threshold voltage (Vth) and on-current (Ion) over several technology generations (180 nm, 100 nm and 65 nm) is reported. It is verified that the dominant microscopic variations of the MOSFET device can be extracted quantitatively from these macroscopic variation data by applying the surface-potential compact model Hiroshima University STARC IGFET model 2 (HiSIM2), which is presently brought into industrial application. Only a small number of microscopic parameters, representing substrate doping (NSUBC), pocket-implantation doping (NSUBP), carrier-mobility degradation due to gate-interface roughness (MUESR1) and channel-length variation during the gate formation (XLD) are found sufficient to quantitatively reproduce the measured macroscopic within-wafer variations of Vth and Ion for all channel length Lg and all technology generations. Quantitative improvements from 180 nm to 65 nm are confirmed to be quite large for MUESR1 (about 70%) and Lmin(XLD) (55%) variations, related to the gate-oxide interface and the gate-stack structuring, respectively. On the other hand, doping-related technology advances, which are reflected by the variation magnitudes of NSUBC (30%) and NSUBP (25%), are found to be considerably smaller. Furthermore, specific combinations of extreme microscopic parameter-variation values are able to represent the boundaries of macroscopic fabrication inaccuracies for Vth and Ion. These combinations are found to remain identical, not only for all Lg of a given technology node, but also for all investigated technologies with minimum Lg of 180 nm, 100 nm and 65 nm.
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