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2 Electron Technology

2 2000

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NO₂ sensitivity of thin n-InP epitaxial layers

Talazac L., Blanc J. P., Battut V., Mollot F.

Electron Technology

2000

Vol. 33, No. 1/2

213-216

A new NO₂ resistive sensor using n-InP epitaxial layers grown by MBE on semi-insulating InP substrate is presented. A model based on field effect is proposed to explain interaction mechanisms and conductance variations. Simple theoretical calculations for the gas concentrations for the gas concentratration dependence are in good agreement with experiments.

Molecular materials : gas sensors properties, complementarity with metallic oxides

Pauly A., Germain J. P., Blanc J. P.

Electron Technology

2000

Vol. 33, No. 1/2

179-186

In this paper, we present the potentialities of using molecular materials as sensing elements of a gas sensor. We propose a model for interpreting the actions of gases on the electrical conductivity of molecular crystals. A particular attention is devoted to the phthalocyanines because of its great interest in such an application. Gas sensor parameters of some phthalocyanine layers are reviewed. A comparative study of gas sensor parameters of phthalocyanines and those presented by metallic oxides is made. This work shows the great variety of phthalocyanines molecules and gas sensors parameters associated. This points out the interest of the association between the two materials in a multi-sensor device.