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1 2001

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Dependence of electrical conductance of a-Si:H films on Na concentration in glass substrate

Pantchev B., Danesh P., Kreissig U., Schmidt B.

Opto-Electronics Review

2001

Vol. 9, No. 4

431-434

The electrical conductance of a-Si:H is studied in films deposited on ion-exchanged optical wavequides in glass substrates. The effect of chemical composition of the near-surface region of the wavequide is considered from the viewpoint of the electrical instability of a-Si:H related with the penetration of Na ions from the substrate into the film. The optical wavequides have been prepared by Ag+ - Na+ or K+ - Na+ thermal or field-assisted ion exchange in soda-lime glass (SLG). The Na concentration in the near-surface region of the glass substrate has been estabilished by means of elastic recoil detection analysis (ERDA). The obtained results demonstrate the possibility of reduction of electrical instability of a-Si:H films deposited on optical wavequides in glass. It is shown that in some cases an additional Na depletion of the near-surface region is necessary to avoid Na contamination of the a-Si:H films.