Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

Codoping of wide gap epitaxial III-Nitride semiconductors

Korotkov R. Y., Gregie J. M., Wessels B. W.

Opto-Electronics Review

2002

Vol. 10, No. 4

243-249

Codoping in p-type, epitaxial GaN grown by metal-organic vapour phase epitaxy (MOVPE) was investigated. An enhancement of hole concentration was observed experimentally in p-type GaN:Mg codoped with oxygen donors. The hole concentration of GaN:Mg codoped with oxygen increased super-linearly from 8x10¹⁶ to 2x10¹⁸ cm⁻³ upon increasing the oxygen dopant partial pressure. A factor of 3-5 enhancement of hole concentration was measured for a fixed oxygen partial pressure during the growth of p-type GaN:Mg. However, when Si was codoped with GaN:Mg, the hole concentration remained constant. Current experimental results are compared with the existing theory of codoping in GaN.