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2 Materials Science Poland

2 2006

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Epitaxial films of GaInPAsSb quinary solid solutions

Kuznetsov V. V., Rubtsov E. R., Kognovitskaya E. A.

Materials Science Poland

2006

Vol. 24, No. 4

1057--1066

The method of the obtaining quinary solid solutions on the basis of A IIIBV compounds (GalnPAsSb) with specified properties was developed. New GaInPAsSb/GaSb, GalnPAsSb/InAs heterostructures were obtained to create optoelectronic devices for the 2-5 urn spectral range. The broken-gap type II hetero junction was formed at the InAs/Ga0.92In 0.08P0.05As0.08Sb0.87 heterostructure, and a light-emitting diode was fabricated with the emission intensity maximum at 1.9 žm.

Dependence of GaAs and Si surface energy on the misorientation angle of crystal planes

Zdyb A., Olchowik J. M., Mucha M.

Materials Science Poland

2006

Vol. 24, No. 4

1109--1114

The paper reports on the dependence of Si and GaAs surface energies on the misorientation angle of Si and GaAs crystal planes in a broad angle range. The energetic balance between GaAs and Si is unfavourable for growth of GaAs on Si substrate. Minima of the surface energy correspond to GaAs/Si heterostructure interface energy minima which indicate preferable crystal orientations for obtaining GaAs layers on Si.