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EN
Charge-carrier transport in the channel of bottom gate, top contact organic field effect transistors with anisotropic layers of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pentacene) obtained by zone casting was investigated using scanning Kelvin probe microscopy combined with atomic force microscopy. The TIPS-Pentacene continuous layers consisted of thin crystals unidirectionally oriented in the channel. Devices with perpendicular and parallel charge flow in the transistor channel were prepared. It was found that irregularities in the surface morphology at the semiconductor layer in the transistor channel are correlated with the local potential profile, and that the channel resistance strongly depends on the orientation of the TIPS-Pentacene crystals.
EN
A method for the preparation of oriented, anisotropic layers of soluble molecular materials on substrates that were not pre-oriented (so-called zone casting) is presented. The method consists in casting a suitable solution, continuously supplied by a nozzle, onto a moving substrate. Solvent evaporation takes place from the surface of the meniscus formed between a special flat nozzle and the substrate. Due to a gradient of the solute concentration, its solidification proceeds in a narrow zone under highly anisotropic conditions. The conditions of stationary deposition and the influence of various parameters on the process, such as casting speed, the diffusion coefficient, evaporation rate, are discussed. It is shown that the zone casting can be used to obtain anisotropic layers of many different low-molecular-weight and macromolecular materials.
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