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1

On prognosis of variation of properties of epitaxial layers by choosing of temperature field during growth

Pankratov E.L.

Computer Methods in Materials Science

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2020

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Vol. 20, No. 1

1--6

EN

In this paper, we analyze the influence of the temperature of growth of epitaxial layers during their growth. Conditions are formulated under which the homogeneity of the properties of the epitaxial layers increases. An analytical approach for the analysis of mass and heat transfer is proposed, allowing at the same time to take into account changes in the parameters of processes both in space and in time, as well as nonlinearity of these processes.

PL

W artykule opisano analizę wpływu temperatury na wzrost epitaksjalnych warstw w procesie technologicznym. Sformułowano szereg warunków dla poprawy jednorodności badanych warstw. Wprowadzono analityczne rozwiązanie dla równania transportu masy i ciepła. To rozwiązanie umożliwiło uwzględnienie zmian parametrów procesu zarówno w przestrzeni jak i w czasie. Ponadto przeprowadzone rozwiązanie pozwoliło na uwzględnienie nieliniowości badanego procesu.

2

Influence of hydrogen volumetric flow rate on temperature distribution in CVD reactor based on epi-growth of SiC

Skibinski J., Wejrzanowski T., Teklinska D., Kurzydlowski K. J.

Journal of Power Technologies

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2015

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Vol. 95, nr 2

119--125

EN

In the present paper the quantitative relationship between the heat and mass transfer in the Aixtron VP508 hot wall CVD reactor and the epitaxial growth of silicon carbide is determined. The aim of this study was to estimate optimal process conditions for obtaining monocrystalline silicon carbide epi-layers with the most homogenous thickness. Since there are many parameters influencing reactions on the crystal area, such as temperature, pressure, gas flow and reactor geometry, it is difficult to design an optimal process. Detailed 3D modeling was used to gain insight into the process conditions, as it is problematic to experimentally determine the exact distribution of heat and mass transfer inside the reactor during epitaxial growth. Numerical simulations allow one to understand the process by calculating the heat and mass transfer distribution during the epitaxial growth of silicon carbide. The present approach was applied to enhance the performance of the Aixtron VP508 reactor.

3

Resonant cavity enhanced photonic devices.

Bugajski M., Muszalski J., Mroziewicz B., Regiński K., Ochalski T.J.

Optica Applicata

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2001

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Vol. 31, nr 2

273-288

EN

We review our recent works on technology, basic physics and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In/sub x/Ga/sub 1-x/As/GaAs planar microcavities with DBR reflectors. The room temperature emission in lambda -sized cavities is enhanced in comparison with its free space value, while in lambda /2-sized cavities suppression of spontaneous emission is observed. The characteristics of spontaneous emission in microcavities depend on the wavelength difference between the emitter and the cavity resonance. It has been shown that ideal tuning of the cavity can be achieved by adjusting sample temperature. In general, observed trends are in agreement with theoretical predictions. These changes to the spontaneous emission process directly affect vertical-cavity laser (VCSEL) properties. An increased coupling efficiency of spontaneous emission into the lasing mode is observed in VCSELs with lambda -sized cavities. We demonstrate the operation of resonant-cavity light emitting diodes (RC LED) and optically pumped VCSELs developed recently at the Department of Physics and Technology of Low Dimensional Structures of the Institute of Electron Technology. The epitaxial growth issues, fabrication technology and basic characteristics of these devices are discussed

4

Magnetic thin films and nanostructures for emerging technologies.

Krishnan K.M.

Inżynieria Materiałowa

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1998

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R. XIX, nr 4

775-778

EN

The optimization of the magnetic properties of materials for a wide range of technologies requires a dynamic iteration between synthesis, property measurements and the evaluation/control of microstructure (physical, chemical & magnetic) at the appropriate length scales. In addition, atomically engineered thin films and nanostructures offer new opportunities to elucidate the physics of magnetism, test new theories and most importantly build new materials with unique anisotropy, transport and hysteretic properties. These interests arise from advances in materials synthesis, an increased appreciation of the degree to which magnetic properties are influenced by microstructure and interfacial processes and the ability to characterize them by electron-optic and x-ray scattering/dichroism techniques. In this paper, we present an overview of our recent work in these areas, involving an integrated approach of growth/synthesis, property measurements and advanced characterization.