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Hall effect sensors performance investigation using three-dimensional simulations

Paun M.-A., Sallese J.-M., Kayal M.

International Journal of Microelectronics and Computer Science

2011

Vol. 2, nr 4

140-145

Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows various Hall sensor implementations. The simulation procedure could guide the designer in choosing the Hall cell optimum fabrication process, shape and dimensions in terms of the performances envisaged to be achieved.