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2 Journal of Telecommunications and Information Technology

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SOI Technology: An Opportunity for RF Designers?

Raskin J.-P.

Journal of Telecommunications and Information Technology

2009

nr 4

3-17

This last decade silicon-on-insulator (SOI) MOS-FET technology has demonstrated its potentialities for high frequency (reaching cutoff frequencies close to 500 GHz for n-MOSFETs) and for harsh environments (high temperature, radiation) commercial applications. For RF and system-onchip applications, SOI also presents the major advantage of providing high resistivity substrate capabilities, leading to substantially reduced substrate losses. Substrate resistivity values higher than 1 k? cm can easily be achieved and high resistivity silicon (HRS) is commonly foreseen as a promising substrate for radio frequency integrated circuits (RFIC) and mixed signal applications. In this paper, based on several experimental and simulation results the interest, limitations but also possible future improvements of the SOI MOS technology are presented.

On-wafer wideband characterization: a powerful tool for improving the IC technologies

Lederer D., Raskin J. P.

Journal of Telecommunications and Information Technology

2007

nr 2

69-77

In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage - SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.