Wyniki wyszukiwania - BazTech

1

Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

Śpiewak Patrycja, Wasiak Michał, Sarzała Robert P.

Optica Applicata

|

2020

|

Vol. 50, nr 2

301--310

EN

This paper presents results of numerical simulations of a nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction. The modeled laser is based on a structure created at the University of California in Santa Barbara. The analysis concerns the impact of the position of laser’s active area on the emitted power. Both small detunings from the standing waveanti-node, and positioning of the active area at different anti-nodes are considered.

2

A simple and precise method for the threshold current determination in vertical-cavity surface-emitting lasers

Pruszyńska-Karbownik Emilia, Gębski Marcin, Marciniak Magdalena, Lott James A., Czyszanowski Tomasz

Optica Applicata

|

2020

|

Vol. 50, nr 2

281--288

EN

In this paper, we present experimental results of spontaneous emission clamping in the threshold for vertical-cavity surface-emitting lasers (VCSELs) with oxide current confinement. We show that the spontaneous emission not wholly clamps in the threshold. We propose a new method for determining the threshold current value using the study of the clamping phenomena. This method has an advantage over the commonly used methods in the accuracy because the current of the spontaneous emission clamping is betted defined than the current of the slope change of the stimulated emission light-current curve. The estimated uncertainty of the method is no more than 20 μA.

3

Multimode VCSEL Thermal and Spatial Model

Shi X., Qi C., Wang G.

Przegląd Elektrotechniczny

|

2012

|

R. 88, nr 7b

248--251

EN

We present a VCSEL model that addresses the spatial dependence and thermal behavior of VCSELs based on multimode rate equations without sacrificing the numerical efficiency demanded by the circuit-level simulation of optoelectronic systems. The model is more comprehensive and parameters are easier to determine. The equivalent circuit of the model and expressions of circuit elements are given. It is implemented into SPICE-like simulators to simulate the dc, ac and transient features of VCSELs. The simulated results exhibit good agreements with references.

PL

Zaprezentowano model lasera typu VCSEL (vertical cavity surface emitting laser). Analizowano właściwości przestrzenne i termiczne. Zaproponowano schemat zastępczy modelu i przeprowadzono symulacje.

4

Thermal properties and wavelength analysis of telecom oriented photonic-crystal VCSELs

Czyszanowski T.

Opto-Electronics Review

|

2010

|

Vol. 18, No. 1

56-62

EN

Results of the self-consistent comprehensive analysis of a room-temperature operation of InP-based 1300-nm AlInGaAs photonic-crystal (PhC) VCSELs are presented. In particular, an influence of PhC parameters on thermal effects within VCSEL volume and its emission wavelength are analysed. The PhC has been found to introduce a number of opposite effects including a possible light leakage through PhC holes. From one side, PhC holes make more difficult heat-flux extraction from VCSEL volume leading to higher temperature increases within it. But, from the other side, a properly manufactured PhC creates an efficient radial confinement mechanism for VCSEL radiation field. It enhances an interaction between the field and the active-region carriers leading to a decrease in both the VCSEL lasing threshold and temperature increases. Seemingly both effects may similarly affect VCSEL operation, but our analysis revealed, that thermal properties of the PhC VCSEL are mainly dependent on an efficient confinement of its radiation field within the active region impeding a mode leakage through PhC holes, whereas an importance of deterioration of heat-flux extraction from VCSEL volume is much less essential. The wavelength shift induced by a change of PhC parameters has been found not to exceed 4×10⁻³ μm.

5

Polarization-bistable vertical-cavity surface-emitting lasers : application for optical bit memory

Kawaguchi H.

Opto-Electronics Review

|

2009

|

Vol. 17, No. 4

265-274

EN

We summarize recent results on polarization-bistable vertical-cavity surface-emitting lasers (VCSELs) and their application to optical buffer memory. All-optical flip-flop operation with very low switching energies and high repetition rates is achieved. An optical buffer memory consisting of a two-dimensional array of polarization-bistable VCSELs, in which the bit state of the optical signal, ''0'' or ''1'', is stored as a lasing linear polarization state of 0 or 90°. Input data stored as the polarization states of the first VCSEL are transferred to the polarization states of the second VCSEL. In our experiments with 980 nm polarization-bistable VCSELs, 10 Gbit/s optical buffering, 2-bit optical buffering, and a shift register function have been successfully demonstrated.