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Prospects and Development of Vertical Normally-off JFETs in SiC

Bakowski M.

Journal of Telecommunications and Information Technology

2009

nr 4

25-36

This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations. The performance of analyzed concepts is compared in terms of blocking voltage, specific on-state resistance, maximum output current density and switching performance in the temperature range from 25 C degree to 250 C degree. The main objective of the analysis is to ascertain consequences of different design and technology options for the total losses and high temperature performance of the devices.