Wyniki wyszukiwania - BazTech

Ograniczanie wyników

1 Opto-Electronics Review

1 2010

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: variband structure

Sortuj według:

Ogranicz wyniki do:

Energy-band diagrams and capacity-voltage characteristics of CdxHg₁₋xTe : based variband structures calculated with taking into account dependence of electron affinity on a composition

Voitsekhovskii A. V., Gorn D. I., Nesmelov S. N., Kokhanenko A. P.

Opto-Electronics Review

2010

Vol. 18, No. 3

241-245

The purpose of this scientific work is the research of energy-band diagrams and capacity-voltage characteristics of CdxHg₁₋xTe -based variband heteroepitaxial structures with taking into account the dependence of electron affinity on the composition. Numerical simulations of energy-band diagrams and capacity-voltage characteristics for metal-insulator-semiconductor structures based on CdxHg₁₋xTe -variable composition layers are carried out in this work. Energy diagrams are calculated with taking into account the dependence of electron affinity on the composition x of CdxHg₁₋xTe. This dependence was obtained in terms of dependence of the local electroneutrality level on the composition for CdxHg₁₋xTe.