Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Powiadomienia systemowe

Sesja wygasła!

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: vapor phase epitaxy

Sortuj według:

Ogranicz wyniki do:

Influence of a back side dielectric mirror on thin film silicon solar cells performance

Cieslak Krystian, Fave Alain, Lemiti Mustapha

Optica Applicata

2019

Vol. 49, nr 1

151--159

Back side p+ emitter thin silicon solar cells have been constructed using vapor phase epitaxy. Double porous structure on a c-Si substrate was used as a seed substrate in order to enable active layer separation after vapor phase epitaxy growth. Structure of the back side emitter solar cell was obtained in situ during the epitaxy process. In order to enhance solar cell response to light from a range of 700–1200 nm wavelength, the back side dielectric mirror was developed and optimized by means of a computer simulation and deposited by plasma enhanced chemical vapor deposition. At the same time, a reference sample was fabricated. Comparison of solar cells performance with or without the back side mirror was performed and clearly shows that the quality of solar light conversion into the electricity by means of solar cells, can be improved by using the structure proposed in this article.

Etching and ellipsometry studies on CL-VPE grown GaN epilayer

Puviarasu P.

Materials Science Poland

2017

Vol. 35, No. 1

135--139

The surface morphological characteristics of wet chemical etched GaN layers grown at different temperatures on (0 0 0 1) sapphire substrates by Chloride-Vapor Phase Epitaxy (Cl-VPE) have been studied using optical microscope. Significant surface morphology changes have been observed in correlation to the growth temperature and etching time. Also optical properties of the as grown and high-energy silicon (Si) ion irradiated gallium nitride (GaN) epilayers were studied using monochromatic ellipsometry. The effect of ion fluences on the refractive index of the GaN has been investigated and it has been found to decrease with an increase of ion fluence. This decrease is attributed to irradiation-induced defects and polycrystallization which plays an important role in determining the optical properties of silicon (Si) ion irradiated GaN layers.