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1

Hall effect test bench for temperature dependence of carrier concentration

Dyndał Katarzyna, Sobków Zbigniew, Sanetra Jerzy, Marszałek Konstanty W.

Przegląd Elektrotechniczny

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2022

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R. 98, nr 9

231--234

EN

This paper presents an integrated bench for Hall effect measurements consisting of a helium cryostat placed between the electromagnet poles with a field of 0.5 T and a control and measurement system, as well as control algorithm for different operating modes. The results of measurements of majority carrier concentration by van der Pauw method in the temperature range 165 K - 300 K for indium tin oxide (ITO).

PL

W artykule przedstawiono zintegrowane stanowisko do pomiaru efektu Hall’a składające się z helowego kriostatu umieszczonego między nabiegunnikami elektromagnesu o polu 0,5 T oraz systemu kontrolno-pomiarowego, a także algorytmu sterowania dla różnych modów pracy. Zaprezentowano wyniki pomiarów koncentracji nośników większościowych metodą van der Pauw’a w zakresie temperatur od 165 K do 300 K dla warstw tlenku indowo-cynowego (ITO).

2

Semiconductor contact layer characterization in a context of hall effect measurements

Kowalewski Andrzej, Wróbel Jarosław, Boguski Jacek, Gorczyca Kinga, Martyniuk Piotr

Metrology and Measurement Systems

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2019

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Vol. 26, nr 1

109--114

EN

A revision of the standard approach to characterization of thin-semiconductor-layer Hall samples has been proposed. Our results show that simple checking of I(V) curve linearity at room temperature might be insufficient for correct determination of bias conditions of a sample before measurements of Hall effect. It is caused by the nonlinear behaviour of electrical contact layers, which should be treated together with the tested layer a priori as a metal-semiconductor-metal (MSM) structure. Our approach was examined with a Be-doped p-type InAs epitaxial layer, with four gold contacts. Despite using full high-quality photolithography a significant asymmetry in maximum differential resistance (Rd) values and positions relative to zero voltage (or current) value was observed for different contacts. This suggests that such characterization should be performed before each high-precision magneto-transport measurement in order to optimize the bias conditions.

3

Determination of Fabric Surface Resistance by Van Der Pauw Method in Case of Contacts Distant from the Sample Edge

Tokarska M.

Autex Research Journal

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2014

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Vol. 14, no. 2

55--60

EN

The van der Pauw method can be used to determine the electroconductive properties of textile materials. However, the sample surface resistance can be determined provided that the sample has characteristics typical for the van der Pauw structure. In the paper, a method of evaluating the sample structure is shown. The selected electroconductive woven fabrics are used as an example of van der Pauw structure. An analysis of impact of electrodes placement on the resistance measurements was conducted. Knowing how the resistance of the sample varies with the electrodes distance from the edge, the samples’ surface resistances were calculated in cases when the electrodes are placed at the sample edge. An uncertainty analysis of the samples’ surface resistances was conducted based on the Monte Carlo method.