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1 2003

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The effect of underlayers on grain orientation and magnetic properties of barium-ferrite thin film

Kim D. H., Nam I. T., Hong Y. K.

Materials Science

2003

Vol. 21, No. 1

65-72

The effect of employing various sputtered underlayers in order to optimize the characteristics of Barium ferrite (BaM) thin films for magnetic recording media have been studied. BaM thin films and underlayers (Fe, Cr, Al2O3, Fe2O3, ZnFe2O4, TiO2) were prepared by rf/dc magnetron sputtering on (100) oriented bare Si substrate, and were crystallized by post-annealing. All the BaM films, except BaM/Fe/Si film, attained nearly the same perpendicular and in-plane coercivities. Perpendicular anisotropy was observed in BaM/Fe/Si film. The BaM/TiO2/Si exhibits the highest coercivity. However, regardless of the underlayer, BaM grains are randomly oriented. By adopting ZnFe2O4 as an underlayer, the interdiffusion of Si from substrate was prohibited to some degree. The microstructure of BaM in BaM/TiO2/Si was strongly dependent on both the microstructure of TiO2 underlayer and the total sputtering gas pressure. The control of an underlayer microstructure is one of the important factors to control grain size and shape of the BaM layer.