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AlxGa₁-xN based UV visible-blind photodetector device applications

Omnes F., Monroy E., Calle F., Munoz E., Beaumont B., Gibart P.

Opto-Electronics Review

2000

Vol. 8, No. 1

43-55

AlxGa₁-xN material system whose bandgap lies in the 3.42-6.2 eV range is extremely interesting for visible and solar blind UV photodetector applications. This paper describes the device performances of AlxGa₁-xN (x = 0 - 35%) UV photoconductors and Schottky barrier photodetectors for visible-blind applications grown on c-oriented sapphire, with a detailed balance with the basic materials properties. Conventional low-temperature grown AlN or GaN were used for all applications. High quality Schottky barrier photodiodes made of epitaxial lateral overgrown (ELOG) GaN are also presented. All Schottky barrier devices show a fast time response (15 ns for Al₀.₀₂₂Ga₀.₇₈N(Si) photodiodes grown on AlN nucleation layers), a high UV-visible rejection factor (> 3 orders of magnitude for AlGaN(Si) photodiodes grown on GaN or AlN nucleation layers, and rising up to 4 orders of magnitude for the GaN ELOG material), and high absolute values of above bandgap reponsivities (up to 130 mA/W for GaN ELOG materials). New application of AlGaN UV Schottky barrier photodetectors to monitor the biological action of the solar UV radiations as well as the device performance of high quality GaN and AlGaN metal semiconductor metal with cutoff wavelengths as short as 310 nm, are described in detail.