Wyniki wyszukiwania - BazTech

Ograniczanie wyników

1 Elektronika : konstrukcje, technologie, zastosowania

1 2001

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: układy Co/Cu

Sortuj według:

Ogranicz wyniki do:

Mikrostruktura układów wielowarstwowych Co/Cu badania metodami niskokątowego odbicia promieniowania X i skaningowej mikroskopii sił

Marszałek M., Jaworski J., Marszałek K., Bolling O., Sulkio-Cleff B.

Elektronika : konstrukcje, technologie, zastosowania

2001

Vol. 42, nr 8-9

81-83

In this paper we present the studies of the microstructure of Co/Cu multilayers (ML) at the second antiferromagnetic maximum of exchange coupling and the influence of microstructure on the giant magnetoresisitivity. Co/Cu multilayers were thermally evaporated on Si substrates covered with buffer layers of different metals known as surfactants (Ag, Cu, In, Pb, Bi). Surfactant properties lead in epitaxial growth to the layer-by-layer growth in conditions when usually 3D growth is observed. Structural characterisation of samples performed by lowangle X-ray diffraction resulted in determining of the structure and the interface roughness of the studied systems. The topography of the surface of ML and of the buffer layers has been measured with Scanning Force Microscopy (SFM). Magnetoresistance measurements were carried out at room temperature using a standard four-probe dc method with current in the plane of the sample. It seems that a choice of buffer type have no significant effect on the magnitude of GMR. The influence of the roughness on the giant magnetoresistivity is negligible. However, the correlation between GMR and the size of islands on the sample surface has need observed. We suggest that the observed effect can be attributed to the interruption of film continuity and the formation of magnetic bridges between Co layers, resulting in direct ferromagnetic coupling of magnetic films. The creation of granular entities due to the enhanced interlayer diffusion caused by the presence of surfactant metals is the most likely source of GMR in studied samples.