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1
Content available remote On negative differential mobility in nanophotonic device functionality
Anagnostakis E. A.
TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
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2013
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Vol. 17, No 3-4
131--137
EN
The negative differential mobility (NDM) of two-dimensional carrier-gas against some proper external regulator allowing gradual controlled modification of the nanointerfacial environment tends to occur as interwoven with the nanophotonic device functionality. In this work, several instances from our two-decade principal research of both experimental observation and conceptual prediction concerning nanophotonics NDM are reconsidered towards outlining a global potential for the appearance of the effect.
2
Content available Measurements of AlGaN/GaN heterostructures for sensor applications
Hojko M R, Paszuk D, Paszkiewicz B
Optica Applicata
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2013
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Vol. 43, nr 1
35--38
EN
In the paper, the behavior of AlGaN/GaN HEMT-type heterostructures in a water solution of (KOH + HCl) with differing pH was studied. The influence of the electrolyte pH on channel pinch-off voltage was measured using impedance spectroscopy methods. It was observed that the change of the pH of electrolyte has a strong effect on the pinch-off voltage of AlGaN/GaN HEMT-type heterostructures independently of the concentration of other ions. In high-pH environment the so-called memory effect of heterostructures was revealed. Its possible origin was discussed. A general theory to explain all results was proposed.
3
Kwantowy (2DEG) czujnik pola magnetycznego z pseudomorficzną warstwą aktywną In0,52Al0,48As/In0,8Ga0,2As na podłożu (411)A InP
Przesławski T., Wolkenberg A.
Elektronika : konstrukcje, technologie, zastosowania
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2007
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Vol. 48, nr 1
55-61
PL
Opisano koncepcję nowej generacji czujników Halla wykorzystujących półprzewodnikowe studnie kwantowe wypełnione 2DEG. Technologie MBE, MOCVD umożliwiają kontrolę parametrów rosnących warstw oraz wytwarzanie tzw. struktur pseudomorficznych - mechanicznie naprężonych na granicy z sąsiednimi warstwami i nie przekraczających grubości krytycznej. Podano właściwości elektryczne oraz charakterystyki różnych parametrów, które mogą być odpowiednio kształtowane (inżynieria przerwy zabronionej, inżynieria funkcji falowych). Wymienione zalety tej struktury heterozłączowej w połączeniu ze wzrostem na podłożu (411 )A InP powinny znacznie poprawić właściwości transportowe ładunków elektrycznych. Czujniki Halla wykorzystujące struktury pseudomorficzne mogą w najbliższej przyszłości wyprzeć z wielu zastosowań tradycyjne hallotrony.
EN
There was described new concept of Hall sensors with fulfilled quantum wells by 2DEG. MBE and MOCVD technology allow control of the growing layers (channel and barrier) and therefore also to make pseudomorphic structures mechanic strained on the frontier between neighbor layers and with it thickness lower as critical. It was described different properties and parameters which can be shaped using energy gap and wave function engineering. All values of these structures together with growth on (411)A InP (super- flat interfaces - significant reduction of the interface roughness scattering charge carrier of 2DEG, enhanced electron mobility) must to bring enormous increase of transport parameters of charge carriers. Such Hall sensors can push out in the future the classical Hall sensors with thin layer structure.
4
Content available remote Electrical resistivity of disordered monolayer metallic films
Jarguz P., Paja A.
Materials Science Poland
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2006
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Vol. 24, No. 3
633--637
EN
Electron transport through a disordered two-dimensional array of potentials is investigated. The resistivity is calculated according to the Faber-Ziman diffraction model suitably modified for two-dimensional electron gas. The structure factor is obtained by means of numerical simulations. The pseudopotentials are assumed to be the Shaw potentials with appropriate screening. The resistivities of disordered monolayers of alkali metals have been calculated in this model using the parameters which allowed us to explain well the experimental data for the bulk materials.
5
Content available remote Wigner crystal and other insulating phases of two-dimensional electrons in high magnetic fields
Podor B.
Opto-Electronics Review
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2001
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Vol. 9, No. 2
195-202
EN
A concise review of the history and of the hasic physics of the Wigner crystal (electron solid) in two-dimensional electron systems in semiconductor heterostructures is given. The results of our experimental study on the formation and of the properties of the magnetic field-induced insulating phase, supposed to he a Wigner crystal, in a two-dimensional electron gas in In₀.₅₃Ga₀.₄₇As/InP heterostructures are surveyed. These structures are characterised by a much greater disorder potential than AlGaAs/GaAs heterostructures due to the inherent alloy disorder in the InGaAs layer supporting the two-dimensional electron gas. In high magnetic fields, helow a Landau level filling factor of 0.4-0.5 divergent resistivity, non-linear current-voltage characteristics with a threshold, and a transition from non-activated to activated transport were observed. A model is proposed for the Wigner crystal-like ordering of the two-dimensional electron gas in this system with large disorder
6
Content available remote Rola nieporządku i oddziaływań w dwuwymiarowym gazie elektronowym w silnych polach magnetycznych
Tsui D.
Postępy Fizyki
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1999
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T. 50, z. 6
306-312
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