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Two-colour HgCdTe infrared detectors operating above 200 K

Rutkowski J., Madejczyk P., Piotrowski A., Gawron W., Jóźwikowski K., Rogalski A.

Opto-Electronics Review

2008

Vol. 16, No. 3

321-327

The performance of dual waveband HgCdTe photodiodes fabricated using metaloorganic chemical vapour deposition operated at high temperatures is presented. The effect of additional separating layer on the quantum efficiency and cross-talk of the photodiodes is analyzed. The photodiodes with cutoff wavelengths up to 6 um, good RoA product, and high quantum efficiency at 200 K have been demonstrated. The temperature dependence of the differential resistance is discussed. It is shown that the multilayer heterojunction P-n-N-n-P structure operating in a simultaneous mode has better performance than a structure operating in a sequential mode.

Third-generation sensors for night vision

Norton P.

Opto-Electronics Review

2006

Vol. 14, No. 1

1-10

Third generation sensors are under development to enhance capabilities for target detection and identification, threat warning, and 3D imaging. Distinct programs for both cooled HgCdTe and uncooled microbolometer devices are part of this thrust. This paper will describe the technology for HgCdTe two-colour, high-definition imaging sensors and threat warning devices, avalanche photodiode arrays for 3D imaging, and the supporting technology being developed to enhance the readouts that support these devices. Uncooled detector initiatives will also be described to reduce pixel size in conjunction with the production of 480x640 arrays. Finally, efforts are also beginning to move both photon and thermal detectors closer to radiative-limited performance while simultaneously reducing the cooling requirements for photon detectors.

Infrared detectors at the beginning of the next millennium

Rogalski A.

Opto-Electronics Review

2001

Vol. 9, No. 2

173-187

The paper presents progress in infrared (IR) detector technologies during two hundred history of their development. Classification of two types of infrared detectors (photon detectors and thermal detectors) is done on the basis of their principle of operation. The overview of infrared systems and detectors is presented. Recent progress in different IR technologies is described from a historical point of view. Discussion is focused mainly on current and the most rapidly developing detectors: HgCdTe heterostructure photodiodes, quantum well AlGaAs/GaAs photoresistors, and thermal detectors. The outlook for near-future trends in IR technologies is also presented.