Wyniki wyszukiwania - BazTech

1

Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

Śpiewak Patrycja, Wasiak Michał, Sarzała Robert P.

Optica Applicata

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2020

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Vol. 50, nr 2

301--310

EN

This paper presents results of numerical simulations of a nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction. The modeled laser is based on a structure created at the University of California in Santa Barbara. The analysis concerns the impact of the position of laser’s active area on the emitted power. Both small detunings from the standing waveanti-node, and positioning of the active area at different anti-nodes are considered.

2

Termiczna analiza azotkowych laserów VCSEL ze złączem tunelowym

Śpiewak P., Wasiak M., Sarzała R. P.

Przegląd Elektrotechniczny

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2017

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R. 93, nr 8

27--30

PL

W pracy przedstawiono wyniki termicznej analizy laserów VCSEL wykonanych z materiałów azotkowych. Badane przyrządy posiadały różne typy dolnych zwierciadeł, dielektryczne lub azotkowe. Analizie termicznej poddano lasery zaprojektowane na dwie różne długości fali z zakresu fioletowo-zielonego.

EN

This paper presents the results of thermal analysis of nitride VCSELs. The structures considered here had different types of bottom mirrors, namely dielectric or nitride. The thermal analysis concerned lasers emitting two different wavelengths from the violet-green spectral range.

3

Rola, wymagania i technologia złącza tunelowego dla wielozłączowego ogniwa słonecznego

Dawidowski W., Ściana B., Zborowska-Lindert I., Pucicki D., Radziewicz D., Bielak K., Badura M., Tłaczała M.

Elektronika : konstrukcje, technologie, zastosowania

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2013

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Vol. 54, nr 7

33-35

PL

Wielozłączowe ogniwa słoneczne na bazie półprzewodników złożonych AlIIBV należą do najbardziej wydajnych przyrządów fotowoltaicznych. Istotnym elementem konstrukcyjnym takiego ogniwa jest złącze tunelowe, umożliwiające połączenie elektryczne i optyczne pomiędzy sąsiednimi podogniwami minimalnych stratach. Niniejsza praca omawia funkcje złącza tunelowego oraz wymagania konstrukcyjne stawiane przez ten przyrząd. Dodatkowo przedstawione zostały prace autorów dotyczące epitaksjalnego wzrostu wytworzenia testowej struktury diody tunelowej na bazie GaAs.

EN

Multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds are the most effective photovoltaic devices. One of the most important parts of their construction is a tunnel junction (TJ), which is designed for series electrical connection between individual subcells. This work describes the main principles of the tunnel junction work and requirements for MJSC applications. Moreover the results concerning an epitaxial growth and fabrication of the test GaAs-based tunnel diodes are presented and discussed.

4

Simulation of threshold operation of GaInNAs diode lasers

Sarzała R. P., Maćkowiak P., Wasiak M., Czyszanowski T., Nakwaski W.

Opto-Electronics Review

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2003

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Vol. 11, No. 2

139--142

EN

The advanced three-dimensional fully self-consistent optical-electrical-thermal-gain model of the 1.3-um (GaIn)(NAs)GaAs vertical cavity surface-emitting laser (VCSEL) has been developed to simulate its room-temperature (RT) continuous-wave (CW) performance characteristics and to enable its structure optimisation. The standard GaInNAs VCSEL structure with an intracavity-contacted configuration exhibits very nonuniform current injection into its active region, whereas a uniform current injection is important in long-wavelength VCSELs for low thereshold, high-efficiency and stable-mode operation. Therefore we decided to insert an additional tunnel junction withim the active-region neighbourhood. The tunnel junction is shown to enhance effectively hole injection via a lateral electron current, with only a modest increase (a small penalty) in voltage drop and series resistance compared to standard devices.

5

Designing of possible structures of nitride vertical-cavity surface-emitting lasers

Maćkowiak P., Czyszanowski T., Sarzała R. P., Wasiak M., Nakwaski W.

Opto-Electronics Review

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2003

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Vol. 11, No. 2

119-126

EN

Performance of various possible designs of 400-nm nitride vertical-cavity surface-emitting lasers (VCSELs) has been analysed with the aid of the advanced three - dimensional (3D) thermal-electrical-optical-gain self-consistent threshold simulation. It has been demonstrated that it is practically impossible to reach the fundamental - mode operation in nitride VCSELs of the traditional design with two ring contacts. To enhance this desired operation, uniformity of current injection into VCSEL active regions should be dramatically improved. Therefore we focused our research on designs with tunnel junctions and/or a semitransparent contact. In particular, it has been proved that the design with two cascading active regions, two tunnel junctions and a semitransparent contact may offer the most promissing room-temperature performance characteristics for both pulse and continuous-wave operation. In particular, this design offers high mode selectivity with distinct fundamental transverse mode domination. Our simulations reveal, that the thickness and localization of a semitransparent contact as well as localization of active regions and tunnel junctions are crucial for a succesful construction designing.